High-Temperature Gate Oxidation Furnace

FORTA 系列 HBO 200/150

FORTA Series HBO 200/150

High-Temperature Gate Oxidation Furnace

This product is mainly used for high-temperature oxidation and post-oxidation annealing processes in 6/8-inch integrated circuits and compound semiconductors. It is a single-chamber high-temperature thermal processing system. The system features a high temperature ramp rate, excellent process stability, and a high level of automation, meeting the temperature control and cleanliness requirements of high-temperature processes. It mainly consists of a SiC chamber, an automated transfer system, a gas distribution system, an exhaust gas treatment system, and a high-precision temperature control system. It can perform processes such as post-oxidation annealing and offers good application value in improving gate oxide quality and enhancing device performance.
Wafer Size
6-inch, 8-inch
Applicable Materials
Si / SiC
Applicable Processes
High-Temperature Dry Oxidation (Gate Oxidation) / Wet Oxidation

系统概述

This product is mainly used for high-temperature oxidation and post-oxidation annealing processes in 6/8-inch integrated circuits and compound semiconductors. It is a single-chamber high-temperature thermal processing system. The system features a high temperature ramp rate, excellent process stability, and a high level of automation, meeting the temperature control and cleanliness requirements of high-temperature processes. It mainly consists of a SiC chamber, an automated transfer system, a gas distribution system, an exhaust gas treatment system, and a high-precision temperature control system. It can perform processes such as post-oxidation annealing and offers good application value in improving gate oxide quality and enhancing device performance.

产品特色

① 卓越的工艺稳定性: 采用稳定可靠的热场及温度控制方案,实现高温工艺过程的精准控制与良好重复性,保障产品工艺一致性。
② 高纯碳化硅腔室设计: 采用可靠的碳化硅腔室及相关部件,有效降低高温工艺过程中的金属污染风险,满足半导体制造对洁净度的严格要求。
③ 快速升温能力: 具备较高的升温速率,可有效缩短工艺周期,提高设备运行效率,满足高温氧化及退火工艺需求。
④ 高自动化水平: 配备自动化传输及控制系统,实现晶圆传输、工艺执行及设备状态监测的自动化运行,提高生产效率与设备运行稳定性。
⑤ 稳定可靠的系统设计: 核心系统经过优化设计,具备良好的长期运行稳定性及可靠性,可适应半导体制造过程中的连续生产需求。

Product Features

Outstanding Process Stability

A stable and reliable thermal field and temperature control scheme enables precise control and good repeatability in high-temperature processes, ensuring process consistency.

High-Purity SiC Chamber Design

Reliable SiC chambers and related components effectively reduce the risk of metal contamination during high-temperature processes, meeting the stringent cleanliness requirements of semiconductor manufacturing.

Fast Temperature Ramp-up Capability

A high temperature ramp rate effectively shortens the process cycle and improves equipment operating efficiency, meeting the requirements of high-temperature oxidation and annealing processes.

High Level of Automation

Equipped with automated transfer and control systems, the equipment enables automated wafer transfer, process execution, and equipment status monitoring, improving production efficiency and operational stability.

Stable and Reliable System Design

The core systems are optimally designed for excellent long-term operational stability and reliability, adapting to the continuous production requirements of semiconductor manufacturing.

Applicable Fields

Integrated Circuits (Gate Oxide / Field Oxide)
化合物半导体功率器件(SiC MOSFET/SBD等)
Power Devices (IGBT / MOSFET)
Compound Semiconductors (SiC Gate Oxide)
MEMS
R&D